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Solid State Electronic Devices Upplaga 5
This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.
FEATURES/BENEFITS
NEWThoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices. NEWExpanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1). NEWClearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4). NEWConsolidated coverage of p-n junction diodes and its applications (Ch. 5). NEWGreatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices). NEWEarlier discussion of MOS devices (Ch. 6)Ahead of bipolar junction transistorsreflects the preponderance of complementary MOS field effect transistors (MOSFETs) in integrated circuits today. NEWMajor revision of chapter on Field Effect Transistors (Ch. 6)Both in the underlying theory as well as discussion of a variety of short channel, high field and hot carrier effects in scaled, ultra-small MOSFETs. Includes extensive discussions of the current-voltage and capacitance-voltage characteristics of these devicesand the information that can be gleaned from such measurements. NEWUpdated chapter on Bipolar Junction Transistors (BJTs) (Ch. 7)To reflect current technology. Describes higher-order effects (including the Kirk effect and Webster effect); discusses the Gummel-Poon model (which is more elaborate and physically more accurate than the Ebers-Moll model); and updates the fabrication aspects of BJTs. NEWConsolidated coverage of optoelectronic devices in a single chapter (Ch. 8)Brings the discussion of semiconductor lasers into the same chapter as LEDs and detectors Reflects the growing importance of optoelectronics. NEWUpdated coverage of integrated circuits (Ch. 9)Eliminates outdated material on bipolar processes to reflect the concerted shift to CMOS applications, such as logic and memory integrated circuits. NEWA section on the insulated gate bipolar transistor (Ch. 11)A device that is gradually supplanting the semiconductor-controlled rectifier. NEWReal dataWherever feasible, replaces idealized current-voltage and capacitance-voltage plots with real data.
Upplaga: 5e upplagan
Utgiven: 1999
ISBN: 9780130261014
Förlag: Pearson Education
Format: Häftad
Språk: Engelska
Sidor: 558 st
This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.
FEATURES/BENEFITS
NEWThoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices. NEWExpanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1). NEWClearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4). NEWConsolidated coverage of p-n junction diodes and its applications (Ch. 5). NEWGreatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices). NEWEarlier discussion of MOS devices (Ch. 6)Ahead of bipolar junction transistorsreflects the preponderance of complementary MOS field effect transistors (MOSFETs) in integrated circuits today. NEWMajor revision of chapter on Field Effect Transistors (Ch. 6)Both in the underlying theory as well as discussion of a variety of short channel, high field and hot carrier effects in scaled, ultra-small MOSFETs. Includes extensive discussions of the current-voltage and capacitance-voltage characteristics of these devicesand the information that can be gleaned from such measurements. NEWUpdated chapter on Bipolar Junction Transistors (BJTs) (Ch. 7)To reflect current technology. Describes higher-order effects (including the Kirk effect and Webster effect); discusses the Gummel-Poon model (which is more elaborate and physically more accurate than the Ebers-Moll model); and updates the fabrication aspects of BJTs. NEWConsolidated coverage of optoelectronic devices in a single chapter (Ch. 8)Brings the discussion of semiconductor lasers into the same chapter as LEDs and detectors Reflects the growing importance of optoelectronics. NEWUpdated coverage of integrated circuits (Ch. 9)Eliminates outdated material on bipolar processes to reflect the concerted shift to CMOS applications, such as logic and memory integrated circuits. NEWA section on the insulated gate bipolar transistor (Ch. 11)A device that is gradually supplanting the semiconductor-controlled rectifier. NEWReal dataWherever feasible, replaces idealized current-voltage and capacitance-voltage plots with real data.
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